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Electron Emission Area Depends on Electric Field and Unveils Field Emission Properties in Nanodiamond Films

机译:电子发射区取决于电场和揭示场   纳米金刚膜的发光特性

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摘要

In this paper we study the effect of actual, locally resolved, field emission(FE) area on electron emission characteristics of uniform semimetallicnitrogen-incorporated ultrananocrystalline diamond ((N)UNCD) field emitters. Toobtain the actual FE area, imaging experiments were carried out in a vacuumsystem in a parallel-plate configuration with a specialty anode phosphorscreen. Electron emission micrographs were taken concurrently with $I$-$V$characteristics measurements. It was found that in uniform (N)UNCD films thefield emitting site distribution is not uniform across the surface, and thatthe actual FE area depends on the applied electric field. To quantify the actual FE area dependence on the applied electric field, anovel automated image processing algorithm was developed. The algorithmprocesses extensive imaging datasets and calculates emission area per image. Bydoing so, it was determined that the emitting area was always significantlysmaller than the FE cathode surface area of 0.152 cm$^2$ available. Namely, theactual FE area would change from $5\times10^{-3}$ \% to 1.5 \% of the totalcathode area with the applied electric field increased. Finally and most importantly, it was shown that when $I$-$E$ curves asmeasured in the experiment were normalized by the field-dependent emissionarea, the resulting $j$-$E$ curves demonstrated a strong kink and significantdeviation from Fowler-Nordheim (FN) law, and eventually saturated at a currentdensity of $\sim$100 mA/cm$^2$. This value was nearly identical for all studied(N)UNCD films, regardless of the substrate.
机译:在本文中,我们研究了实际的,局部分辨的场发射(FE)面积对均匀掺入半金属氮的超纳米晶金刚石((N)UNCD)场致发射器的电子发射特性的影响。为了获得实际的有限元分析面积,在具有特殊阳极磷光屏的平行板配置的真空系统中进行了成像实验。电子发射显微照片与$ I $-$ V $特征测量同时进行。已经发现,在均匀的(N)UNCD膜中,场发射点分布在整个表面上是不均匀的,并且实际的FE面积取决于所施加的电场。为了量化实际有限元区域对所施加电场的依赖性,开发了anovel自动图像处理算法。该算法处理大量的成像数据集并计算每幅图像的发射面积。通过这样做,确定了发射面积总是明显小于可用的0.152cm 2的FE阴极表面积。即,随着施加电场的增加,实际的FE面积将从总阴极面积的$ 5×10 ^ {-3} $ \%变为1.5 \%。最后,也是最重要的一点是,当通过在实验中测得的$ I $-$ E $曲线通过与场有关的发射区进行归一化时,所得的$ j $-$ E $曲线表现出强烈的扭结和与Fowler- Nordheim(FN)定律,并最终以$ \ sim $ 100 mA / cm $ ^ 2 $的电流密度饱和。对于所有研究的(N)UNCD膜,该值几乎相同,而与基材无关。

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